Optical modulation of the effective channel thickness in GaAs field effect transistors with a Schottky gate (MESFETs) |
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Authors: | I A Bocharova |
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Institution: | (1) Institute of Electronics, National Academy of Sciences of Belarus, 22 Logoiskii trakt, Minsk, 220090, Belarus |
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Abstract: | Using a model relating the change in drain current with modulation of the effective channel thickness upon IR illumination
of GaAs field effect transistors with a Schottky gate (MESFETs), it is shown that it is possible to determine the change in
channel thickness and the concentration profile for deep centers in an FET channel. Profiles are given for the distribution
of deep centers in the channels of GaAs MESFETs with different noise temperatures.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 349–353, May–June, 2006. |
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Keywords: | GaAs field effect transistor optical modulation of channel thickness concentration profile of deep centers |
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