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GaAs/AlGaAs多量子阱中载流子动力学的实验研究
引用本文:胡长城,叶慧琪,王刚,刘宝利.GaAs/AlGaAs多量子阱中载流子动力学的实验研究[J].物理学报,2011,60(1):17803-017803.
作者姓名:胡长城  叶慧琪  王刚  刘宝利
作者单位:(1)北京凝聚态物理国家实验室,中国科学院物理研究所固态量子信息与计算实验室,北京 100190; (2)吉林大学物理学院,长春 130021;北京凝聚态物理国家实验室,中国科学院物理研究所固态量子信息与计算实验室,北京 100190
基金项目:国家自然科学基金(批准号: 10774183, 10911130356),国家重点科学研究发展计划(批准号: 2009CB930500)和财政部、中国科学院支持项目资助的课题.
摘    要:利用瞬态光栅激光光谱技术测量了(110)方向生长的本征GaAs/AlGaAs多量子阱的双极扩散系数.室温下,光激发的载流子浓度nex=3.4×1010/cm2时,测得双极扩散系数Da=13.0 cm2/s,载流子的寿命τR=1.9 ns.改变光激发的载流子浓度(nex关键词: 瞬态光栅 量子阱 空穴输运

关 键 词:瞬态光栅  量子阱  空穴输运
收稿时间:2009-03-29
修稿时间:5/7/2010 12:00:00 AM

Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells
Hu Chang-Cheng,Ye Hui-Qi,Wang Gang,Liu Bao-Li.Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells[J].Acta Physica Sinica,2011,60(1):17803-017803.
Authors:Hu Chang-Cheng  Ye Hui-Qi  Wang Gang  Liu Bao-Li
Institution:College of Physics,Jilin University,Changchun 130021,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China
Abstract:The ambipolar diffusion coefficient of (110) GaAs/AlGaAs multiple quantum wells was measured by the transient spin grating technique.The ambipolar diffusion coefficient and carrier life time,which are Da=13.0 cm2/s and τR=1.9 ns,were obtained directly by this technique under carrier concentration nex=3.4×1010/cm2 at room temperature.The measured Da keeps almost a constant value when the photoexcited carrier concentration is increased up to 1.2×1011/cm2.
Keywords:transient grating  quantum well  hole transport
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