Atomic absorption spectrometric methods for analysis of high-purity gallium and rhenium and layers of doped ilicon |
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| Authors: | I.G. Yudelevich L.V. Zelentsova N.F. Beisel T.A. Chanysheva L. Vechernish |
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| Affiliation: | Institute of Inorganic Chemistry, Siberian Branch of the U.S.S.R. Academy of Sciences, NovosibirskU.S.S.R.;Research Institute for Telecommunication, BudapestHungary |
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| Abstract: | Atomic absorption spectrometry with electrothermal atomization is used to determine 13 and 15 elements in high-purity rhenium and gallium, respectively. Flame emission is used for K, Na and Li. Improved detection limits are achieved by extraction of the matrix. Thin films (0.01–l μm)of doped silicon are analyzed for As, Sb, In and Tl by a similar atomic absorption method, after chemical or electrochemical stripping of the layers. |
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