CsPbI3复合TiO2纳米管阵列的制备及表征

为提高二氧化钛纳米管阵列(TiO2NTAs)的光电化学性能,对其进行半导体复合改性处理。采用阳极氧化法制备得到TiO2NTAs,热注入法制备得到全无机钙钛矿CsPbI3,浸渍法实现CsPbI3与TiO2NTAs的复合,制备得到不同浸渍次数的CsPbI3/TiO2NTAs。通过一系列光电性能测试表明,经CsPbI3复合改性处理后,TiO2NTAs的光电化学性能有明显的提高,且经4次浸渍得到的CsPbI3/TiO2NTAs光电性能最佳,其饱和光电流密度为0.92mA/cm2,约为TiO2NTAs的2.97倍,且对应的光转换率最高约为0.55%。除此之外,其瞬态光电流密度最大,约为0.69mA/cm2,并表现出最佳的光响应特性。

Preparation and Characterization of CsPbI3 Composite TiO2 Nanotube Arrays

In order to improve the photoelectrochemical performance of titanium dioxide nanotube arrays( TiO2 NTAs),semiconductor composite modification treatment was carried out. The TiO2 NTAs were prepared by anodic oxidation method,and the total inorganic perovskite CsPbI3 was prepared by hot injection method. The composite of CsPbI3 and TiO2 NTAs was obtained by impregnation method,and CsPbI3/TiO2 NTAs with different immersion times were prepared. Through a series of photoelectric properties tests,the photoelectrochemical performance of TiO2 NTAs was significantly improved after CsPbI3 composite modification treatment,and the photoelectric properties of CsPbI3/TiO2 NTAs obtained by 4 times of impregnation were the best. The saturated photocurrent density reaches 0. 92 m A/cm2,which is about 2. 97 times higher than that of TiO2 NTAs,and the corresponding light conversion rate is about 0. 55%. In addition,the transient photocurrent density is the highest,about 0. 69 m A/cm2,and exhibits the best photoresponsive characteristics.