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在蓝宝石衬底上外延生长ZnGa2O4纳米线及其表征
引用本文:李康,李鹏坤,熊庭辉,孙姝婧,陈晨龙. 在蓝宝石衬底上外延生长ZnGa2O4纳米线及其表征[J]. 人工晶体学报, 2019, 48(6): 992-996
作者姓名:李康  李鹏坤  熊庭辉  孙姝婧  陈晨龙
作者单位:中国科学院福建物质结构研究所,中科院光电材料化学与物理重点实验室,福州350002;中国科学院大学,北京100049;中国科学院福建物质结构研究所,中科院光电材料化学与物理重点实验室,福州350002
基金项目:福建省“百人计划”(第四批)项目;国家自然科学基金(61774158);福建省自然科学基金(2018J01110)
摘    要:使用一种简单的化学气相沉积法成功地在c面蓝宝石衬底上外延生长了整齐排列的ZnGa2O4单晶纳米线。研究了在不同生长温度和生长压力下外延生长ZnGa2O4纳米线,并使用XRD,SEM和TEM对产物进行了表征。结果表明,在生长条件为980℃和100Torr时,可以外延生长出整齐排列的ZnGa2O4纳米线。所制备的ZnGa2O4纳米线直径为60~150nm,并遵循Au催化的VLS生长机制沿其四个结晶学方向在蓝宝石上外延生长。分析了纳米线沿四个方向生长的原因,并对纳米线的光致发光性能进行了探讨。

关 键 词:ZnGa2O4纳米线  化学气相沉积法  光致发光  蓝宝石衬底

Epitaxial Growth and Characterization of ZnGa2O4 Nanowires on Sapphire Substrate
LI Kang,LI Peng-kun,XIONG Ting-hui,SUN Shu-jing,CHEN Chen-long. Epitaxial Growth and Characterization of ZnGa2O4 Nanowires on Sapphire Substrate[J]. Journal of Synthetic Crystals, 2019, 48(6): 992-996
Authors:LI Kang  LI Peng-kun  XIONG Ting-hui  SUN Shu-jing  CHEN Chen-long
Affiliation:(Key Laboratory of Optoelectronic Materials Chemistry and Physics,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Science,Fuzhou 350002,China;University of Chinese Academy of Sciences,Beijing 100049,China)
Abstract:Well-aligned single-crystalline ZnGa2O4 nanowires were successfully epitaxially grown on c-plane sapphire substrate by a convenient chemical vapor deposition(CVD)method.Different growth temperatures and growth pressures to epitaxially grow ZnGa2O4 were investigated and the as-prepared samples were characterized by XRD,SEM,and TEM.It was found that well-aligned ZnGa2O4 nanowires can be epitaxially grown on c-plane sapphire substrate at 980℃and 100 Torr.The as-prepared ZnGa2O4 nanowires have a diameter of 60-150 nm,and epitaxially grow in four crystallographic directions following the Au-catalyzed VLS growth mechanism on the sapphire.The mechanism for the growth of nanowires in four directions was disscussed,and the photoluminescence properties of ZnGa2O4 nanowires were characterized.
Keywords:ZnGa2 O4 nanowire  chemical vapor deposition method  photoluminescence  sapphire substrate
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