雾化施液同质硬脆晶体互抛CMP工艺研究

探究了雾化施液同质硬脆晶体互抛CMP工艺抛光单晶硅片的可行性,分析其材料去除机理。试验采用传统的化学机械抛光CMP和雾化施液同质硬脆晶体互抛CMP,使用三种含有不同成分的抛光液对硅片进行抛光,对抛光前后的硅片进行称重比较两种工艺方法的材料去除率;通过扫面探针显微镜观察硅片的表面形貌,对其表面粗糙度进行分析。使用雾化施液同质硬脆晶体互抛CMP工艺对硅片进行抛光时,硅片表面材料去除率随着抛光压力的增大而增大,抛光压力为9 psi时达到最大为711 nm/min,高于传统化学机械抛光的630 nm/min;对两种工艺抛光后的硅片进行扫描分析得出雾化施液化学机械抛光工艺抛光后的硅片表面粗糙度为3. 8 nm,低于传统化学机械抛光工艺的6. 8 nm。雾化施液同质硬脆晶体互抛CMP工艺抛光硅片是可行的,优于传统化学机械抛光工艺,具有材料去除率高、抛光效果好、节约成本以及绿色环保的优点。

Study on the Technology of Mutual Polish of Homogenous Hard Brittle Crystals in Atomized Slurry Applied CMP

To explore feasibility of polishing single crystal silicon wafer by mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP, and analyzes the removal mechanism of material. It adopts traditional chemical mechanical polishing CMP and mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP respectively, which uses three polishing fluids containing different ingredients to polish the silicon wafer. The wafer before and after polishing is weighed, thus comparing the material removal rates of the two processes. The surface morphology of silicon wafer was observed by scanning probe microscope, so as to analyze its surface roughness. When using mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP to polish silicon wafers, surface material removal rate of silicon wafer increases with the increase of polishing pressure. When the Polish pressure is 9 psi, the maximum is 711 nm/min, which is higher than 630 nm/min of conventional chemical mechanical polishing. Through scanning the silicon wafer after polishing the two processes, it is analyzed that the surface roughness of the silicon wafer after polishing is 3.8 nm, which is less than 6.8 nm of traditional chemical mechanical polishing process. It's feasible to use mutual polish of homogenous hard brittle crystals in atomized slurry applied CMP to polish silicon wafers, which is superior to the traditional chemical mechanical polishing process and has the advantages of high material removal rate, good polishing effect, cost saving and environmental protection.