Temperature tuning of the Bragg resonance of InAsP/InP Bragg-spaced quantum wells grown by MOCVD |
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Authors: | Wei YanXiao-Ming Li Tao Wang |
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Institution: | Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR China |
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Abstract: | In this article, we presented a study of InAs0.04P0.96/InP Bragg-spaced quantum wells (BSQWs), which were grown by metal organic chemical vapor deposition (MOCVD). The quantum wells were characterized by photoluminescence (PL), double-crystal x-ray diffraction (DC-XRD), and reflection spectra. We found that the BSQWs structure grown at 580 °C appears to be extremely abrupt, uniform, free of misfit dislocations, and of narrow PL line width. From the reflection spectra at different temperatures, we presented a theoretical analysis of the changes in band structure for resonant and near-resonant wells, and proposed a new scheme of using the temperature to tune the Bragg resonance of Bragg spaced quantum wells. |
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Keywords: | InAsP/InP Bragg-spaced quantum wells Bragg resonance Metal organic chemical vapor deposition |
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