First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO |
| |
Authors: | Huang Gui-Yang Wang Chong-Yu Wang Jian-Tao |
| |
Affiliation: | Department of Physics, Tsinghua University, Beijing 100084, China; Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
| |
Abstract: | A detailed first-principles study of the diffusion behaviour of pointdefects in the O-terminated (0001) surface in wurtzite ZnO was performed.The O vacancy and interstitial are found to diffuse much more easily insurface than in bulk. The Zn vacancy has a similar migration barrier forboth bulk and surface, but has much smaller barrier for the diffuse-inprocess. The Zn interstitial is difficult to diffuse in the surfacedirectly, but it can diffuse into the bulk relatively easily. Specificvalues of corresponding migration barriers are obtained. |
| |
Keywords: | semiconductor surface diffusion first-principlescalculation |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|