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First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO
Authors:Huang Gui-Yang  Wang Chong-Yu  Wang Jian-Tao
Affiliation:Department of Physics, Tsinghua University, Beijing 100084, China; Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract:A detailed first-principles study of the diffusion behaviour of pointdefects in the O-terminated (0001) surface in wurtzite ZnO was performed.The O vacancy and interstitial are found to diffuse much more easily insurface than in bulk. The Zn vacancy has a similar migration barrier forboth bulk and surface, but has much smaller barrier for the diffuse-inprocess. The Zn interstitial is difficult to diffuse in the surfacedirectly, but it can diffuse into the bulk relatively easily. Specificvalues of corresponding migration barriers are obtained.
Keywords:semiconductor   surface diffusion   first-principlescalculation
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