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First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO
Authors:Huang Gui-Yang  Wang Chong-Yu and Wang Jian-Tao
Institution:Department of Physics, Tsinghua University, Beijing 100084, China; Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract:A detailed first-principles study of the diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO was performed. The O vacancy and interstitial are found to diffuse much more easily in surface than in bulk. The Zn vacancy has a similar migration barrier for both bulk and surface, but has much smaller barrier for the diffuse-in process. The Zn interstitial is difficult to diffuse in the surface directly, but it can diffuse into the bulk relatively easily. Specific values of corresponding migration barriers are obtained.
Keywords:semiconductor  surface diffusion  first-principles calculation
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