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紫外激光刻蚀位相光栅实验初步研究
引用本文:章琳,楼祺洪,魏运荣,董景星.紫外激光刻蚀位相光栅实验初步研究[J].应用激光,2001,21(4):257-259.
作者姓名:章琳  楼祺洪  魏运荣  董景星
作者单位:中国科学院上海光学精密机械研究所,上海201800
基金项目:华中理工大学激光技术开放实验室的部分支持
摘    要:描述308nm和193nm波长准分子激光对PI、PC和PMMA三种聚合物的微刻蚀实验,并从刻蚀表面光洁度、边缘锐利和垂直度、刻蚀阈值等方面对刻蚀特性进行了讨论和比较.其中308nm激光对PC和PMMA刻蚀性能很差,而193nm激光刻蚀PI和PC,以及308nm激光刻蚀PI都能达到微米级横向分辨率和亚微米级深度精度,通过这种方法成功地刻蚀出了二阶位相光栅.

关 键 词:准分子激光  刻蚀  PI  位相光栅
修稿时间:2001年2月7日

The Study of fabrication of phase - grating with UV laser ablation
Zhang Lin,Lou Qihong,Wei Yunrong,Dong Jingxing.The Study of fabrication of phase - grating with UV laser ablation[J].Applied Laser,2001,21(4):257-259.
Authors:Zhang Lin  Lou Qihong  Wei Yunrong  Dong Jingxing
Abstract:In this paper,the direct ablations of polymers PMMA,PI,and PC have been studied at wavelength of 193nm and 308nm. The ablation characteristics of microstructuring are mainly discussed and compared from the points of surface smoothness,edge acuteness and wall verticality,and threshold. The ablation performances of PMMA and PC by 308nm excimer laser are poor. But microndefinition and submicron depth precision can be obtained by the ablations of PI at 308nm,and PI,PC at 193nm,and by this method,phasegratings were successfully fabricated.
Keywords:excimer laser    ablation    PI    phasegrating  
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