Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon |
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Authors: | W J M J Josquin and Y Tamminga |
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Institution: | (1) Philips Research Laboratories, Eindhoven, The Netherlands;(2) Present address: Philips Research Laboratories, Amsterdam Department (Institute of Nuclear Physics), Oosterringdijk 18, Amsterdam |
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Abstract: | High dose implantations (1016 ions/cm2) of antimony in silicon result in concentrations far above the solid solubility of antimony in silicon. Rutherford backscattering
was used to study the behaviour of damage and antimony concentration profiles for 〈100〉 and 〈111〉 substrates. The measurements
were performed for various annealing treatments, implantation temperatures and implantation energies. A crystal orientation
dependent outdiffusion of antimony towards the surface, a highly supersaturated phase of substitutional antimony at 600°C
and a strong reverse annealing effect at higher temperatures were found. |
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Keywords: | 61 80 68 55 |
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