|
|||||
|
|
Metal-insulator transition in a HgTe quantum well under hydrostatic pressure |
|
| Authors: | E B Olshanetsky Z D Kvon Ya A Gerasimenko V A Prudkoglyad V M Pudalov N N Mikhailov S A Dvoretsky |
| Institution: | 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia 2. Novosibirsk State University, Novosibirsk, 630090, Russia 3. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia 4. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow region, 141700, Russia |
| Abstract: | The 2D semimetal in a 20 nm (100) HgTe quantum well is characterized by a comparatively low overlap between the conduction and the valence bands induced by lattice mismatch. In the present paper we report the results of transport measurements in this quantum well under hydrostatic pressure of 14.4 kbar. By applying pressure we have further reduced the band overlap, thereby creating favorable conditions for the formation of the excitonic insulator state. As a result, we observed that the metallic-like temperature dependence of the conductivity at lowering temperature sharply changes to the activated behavior, signaling the onset of an excitonic insulator regime. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |