非晶硅电致发光机理及用电致发光谱研究太阳能电池本征层中的缺陷态能量分布

用弥散性输运控制的复合机理完善地解释了非晶硅p-i-n二极管电致发光谱的特征，从而澄清了许多年来对电致发光效率及峰值的误解．描述了用电致发光谱术研究非晶硅p-i-n太阳能电池本征层中局域态的实验方法．结果表明：采用H₂稀释方法制备的样品，其缺陷态能量分布呈单一窄峰；而用纯硅烷制备的样品其缺陷态能量分布较宽，且呈双峰．关键词：

MECHANISM OF ELECTROLUMINESCENCE FROM a-Si:H AND STUDIES OF DEFECT ENERGY DISTRIBUTION IN INTRINSIC LAYER OF a-Si:H SOLAR CELLS BY ELECTROLUMINESCENCE SPECTRA

The features of the electroluminescence spectra in amorphous silicon p-i-n diodes were ecxellently explained by dispersive-transport-controlled recombination. The misunderstanding to the efficiency and peak position of the electroluminescence for many yera was thereby clarified by the theory. The experimental methods of local states in the intrinsic layer of a-Si-H solar cells studied by the electro-luminescence were described in detail. The studied results showed that the defect energy distribution exhibited a single narrow peak when the samples were prepared by diluted silane using hydrogen, while the defect energy distribution was wider with double peaks in the samples deposited by pure silane.