Approximate Toffoli Gate Originated from a Single Resonant Interaction of Cavity Dissipation and Atomic Spontaneous Emission |
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Authors: | CHEN Chang-Yong |
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Affiliation: | Department of Physics and Information Engineering, Hunan Institute of Humanities, Science and Technology, Loudi 417000, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | We propose a potentially practical scheme to implement an approximatethree-qubit Toffoli gate by a single resonant interaction in dissipativecavity QED in which the cavity mode decay and atomic spontaneous emissionare considered. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the approximate phase gate can be implemented by only a single dissipative resonantinteraction of atoms with the cavity mode. Discussions are made for theadvantages and the experimental feasibility of our scheme. |
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Keywords: | Toffoli gate cavity QED dissipative resonant interaction |
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