High-performance modulation-doped AlGaAs/InGaAs thermopiles for uncooled infrared FPA application |
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| Institution: | 1. 3D-bio Co., Ltd., 3-10-6 Shibusawa, Hadano, Kanagawa, 259-1322, Japan;2. Takion Co., Ltd., 4-5-18 Kamiosaki, Shinagawa-ku, Tokyo 141-0021, Japan;3. Nanyang Technological University, NOVITAS-Nanoelectronics Centre of Excellence, 50 Nanyang Avenue, Singapore 639798, Singapore;1. Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia;2. Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS, 194021, St. Petersburg, Russia;3. Ioffe Institute, 194021 St. Petersburg, Russia;1. Department of Electronic Engineering, Jinan University, Guangzhou 510630, China;2. Department of Electronic Engineering, University of Central Florida, Orlando 32826, USA;1. Department of Physics and Astronomy, University of South Carolina, Columbia, SC 29208, USA;2. INFN - Laboratori Nazionali del Gran Sasso, Assergi (L’Aquila) I-67010, Italy;3. INFN - Laboratori Nazionali di Legnaro, Legnaro (Padova) I-35020, Italy;4. Department of Physics, University of California, Berkeley, CA 94720, USA;5. Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;6. INFN - Sezione di Bologna, Bologna I-40127, Italy;7. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;8. Dipartimento di Fisica, Sapienza Università di Roma, Roma I-00185, Italy;9. INFN - Sezione di Roma, Roma I-00185, Italy;10. INFN - Sezione di Genova, Genova I-16146, Italy;11. Dipartimento di Fisica, Università di Milano-Bicocca, Milano I-20126, Italy;12. INFN - Sezione di Milano Bicocca, Milano I-20126, Italy;13. Shanghai Institute of Applied Physics (Chinese Academy of Sciences), Shanghai 201800, China;14. Department of Physics, University of Wisconsin, Madison, WI 53706, USA;15. Dipartimento di Fisica, Università di Genova, Genova I-16146, Italy;p. INFN - Laboratori Nazionali di Frascati, Frascati (Roma) I-00044, Italy;q. Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, 91405 Orsay Campus, France;r. Physics Department, California Polytechnic State University, San Luis Obispo, CA 93407, USA;s. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA;t. Department of Physics, Yale University, New Haven, CT 06520, USA;u. Department of Physics and Astronomy, University of California, Los Angeles, CA 90095, USA;v. Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;w. Lawrence Livermore National Laboratory, Livermore, CA 94550, USA;x. Laboratorio de Fisica Nuclear y Astroparticulas, Universidad de Zaragoza, Zaragoza 50009, Spain;y. Service de Physique des Particules, CEA / Saclay, 91191 Gif-sur-Yvette, France;z. Department of Nuclear Engineering, University of California, Berkeley, CA 94720, USA;11. EH&S Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;12. INFN - Sezione di Padova, Padova I-35131, Italy;13. Dipartimento di Fisica, Università di Firenze, Firenze I-50125, Italy;14. INFN - Sezione di Firenze, Firenze I-50125, Italy;15. SUPA, Institute for Astronomy, University of Edinburgh, Blackford Hill, Edinburgh EH9 3HJ, UK;16. Dipartimento di Fisica, Università di Bologna, Bologna I-40127, Italy;1. Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel;2. Department of Physics, Technion-Israel Institute of Technology, Haifa 32000, Israel;3. Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;1. Department of Applied Physics, School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, PR China;2. School of Information and Software Engineering, University of Electronic Science and Technology of China, Chengdu 610054, PR China;1. College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006, China;2. Department of Practice Teaching and Equipment Management, Qiqihar University, Qiqihar 161006, China;3. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to be 4900 V/W with 110 μs under the 2 μm design rule. Based on integrated HEMT–MEMS technology, the 32 × 32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application. |
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