Four-component superlattice empirical pseudopotential method for InAs/GaSb superlattices |
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Affiliation: | 1. University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT, U.K.;2. L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy;3. ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich, Switzerland;4. Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz, Austria |
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Abstract: | For the design of InAs/GaSb superlattice (SL) heterojunction infrared photodetectors with very low dark current we have extended the standard two-component superlattice empirical pseudopotential method (SEPM) and implemented a four-component model including interface layers. For both models, the calculated bandgap values for a set of SL samples are compared to bandgaps determined by photoluminescence measurements. While the bandgap resulting from the two-component model agrees well with experimental data for SL structures with individual layer thicknesses of 7 monolayers and more, we show that for SLs with thinner GaSb layers the four-component SEPM model is accurate, when the As-content in the interface and barrier layers is included in the model. |
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Keywords: | InAs/GaSb Superlattice Empirical pseudopotential method LWIR |
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