Photocurrent and photovoltage spectroscopy of amorphous silicon nanoclusters |
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| Institution: | 1. Department of Surgery, Division of Trauma Surgery and Surgical Critical Care, Lewis Katz School of Medicine, Temple University, Philadelphia, PA;2. Department of Surgery, Division of Traumatology, Surgical Critical Care, and Emergency Surgery, Perelman School of Medicine, University of Pennsylvania, Philadelphia, PA;3. Department of Surgery, Division of Trauma/Surgical Critical Care at Grady Memorial Hospital, Emory University School of Medicine, Atlanta, GA;4. Kaiser Permanente South Sacramento Medical Center, Sacramento, CA;5. Department of Epidemiology and Preventive Medicine, Monash University, Melbourne, Australia;6. Department of Epidemiology, Mailman School of Public Health, Columbia University, New York, NY;1. Department of Physics, Jadavpur University, Kolkata 700 032, India;1. Universidad de Santiago de Chile, Facultad de Ciencias, Departamento de Matemática y Ciencia de la Computación, Casilla 307, Correo 2, Santiago, Chile;2. Universidad Austral de Chile, Facultad de Ciencias, Instituto de Ciencias Físicas y Matemáticas, Valdivia, Chile;1. Institute of Neurology (Edinger-Institute), Johann Wolfgang Goethe-University Frankfurt Medical School, Heinrich-Hoffmann-Straße 7, 60528 Frankfurt, Germany;1. Lung Transplant Service, Department of Allergy, Immunology and Respiratory Medicine, The Alfred Hospital, Melbourne, Victoria, Australia;2. Department of Cardiothoracic Surgery, The Alfred Hospital, Melbourne, Victoria, Australia;3. Department of Renal Medicine, The Alfred Hospital, Melbourne, Victoria, Australia |
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| Abstract: | Photoelectric properties (photocurrent efficiency and photovoltage) of the silicon suboxide films containing amorphous silicon nanoclusters were investigated in the spectral range of 300–1100 nm. A strongly pronounced increase of the photocurrent efficiency of the sandwich-like structures with such films on c-Si substrates was observed in the short-wavelength region. The possible mechanisms of the increase were discussed, and carrier multiplication due to impact ionization of the defect states was considered to be the most probable. Impact ionization of the defect states involves two main steps: (i) trapping of the photogenerated electron in a defect state, and (ii) impact ionization of this state by another photoexcited electron that has got sufficient energy due to absorption of a high-energy photon. |
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