Effect of pressure on spin–orbit interaction in a quantum wire with V-shaped cross section |
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| Institution: | 1. Department of Electronic Science, University of Calcutta, Kolkata, India;2. Centre for Research in Nanoscience and Nanotechnology (CRNN), University of Calcutta, Kolkata, India;3. Department of Applied Optics and Photonics, University of Calcutta, Kolkata, India;1. Amirkhanov Institute of Physics Russian Academy of Sciences, Dagestan Science Centre, Makhachkala, Russia;2. Prokhorov General Physics Institute Russian Academy of Sciences, Moscow, Russia;3. Dagestan State University, Makhachkala, Russia;4. Institute of Geothermal Problems Russian Academy of Sciences, Dagestan Science Centre, Makhachkala, Russia;5. Instituto de Física, Universidade Federal Fluminense, Av. Gal. Milton Tavares de Souza s/n, 24210-346 Niterói, RJ, Brazil |
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| Abstract: | In the present work, we have considered a GaAs/Ga1−xAlxAs V-shaped quantum wire with a hydrogenic donor impurity at the center. First, the Schrödinger equation is analytically solved without the impurity. Second, we have used variational approximation to obtain the ground state binding energy. Third, the spin–orbit interaction (SOI) is studied by the perturbation theory. We also have investigated the effect of pressure on the binding energy and SOI in this quantum wire. According to the obtained results, it is found that i) the binding energy increases with increasing pressure, ii) the level splitting increases by increasing pressure, iii) the splitting decreases with increasing wire size. |
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