InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy |
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| Institution: | 1. Centre de soins de suite et de rééducation « La Maison-du-Mineur », 06140 Vence, France;2. Service de pneumologie, hôpital de Clavary, 06130 Grasse, France;3. Service de chirurgie thoracique, hôpital universitaire, 06000 Nice, France;4. Service de chirurgie thoracique, clinique Saint-Georges, 06000 Nice, France;1. Center for Crystal Science and Technology, Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;2. Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City Univ., 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;3. Graduate School of Engineering, Nagoya Univ. Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;1. Department of Electro-Optics Engineering, National Formosa University, Yunlin 632, Taiwan;2. Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan |
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| Abstract: | InSb has been grown by liquid phase epitaxy using indium rich solutions with a supercooling of 2–5 °C onto (1 1 1) oriented Cd0.955Zn0.045Te substrates at 400–405 °C. The resulting epitaxial layers were extensively characterized using X-ray diffraction, optical microscopy, Raman spectroscopy and photoluminescence. |
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