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Asymmetric electrochemical capacitor microdevice designed with vanadium nitride and nickel oxide thin film electrodes
Institution:1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France;2. Institut Jean Lamour (UMR 7198 CNRS-Université de Lorraine), Département CP2S, Ecole des Mines, Parc de Saurupt, CS 14234, 54042 Nancy cedex, France
Abstract:Vanadium nitride thin film has been coupled with electrodeposited nickel oxide in order to design an electrochemical capacitor microdevice. VN has been used as negative electrode while NiO was used as the positive one in 1 M KOH electrolyte. VN exhibits a pseudo-capacitive behavior while NiO shows a faradaic behavior. This asymmetric microdevice has been operated between 0.5 and up to 1.8 V in aqueous based electrolyte (1 M KOH). Long term cycling ability (10,000 charge/discharge cycles) has been demonstrated with interesting energy (1.0 μW h cm 2) and power (40 mW cm 2) densities.
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