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Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE
Affiliation:1. IQE, Inc., 119 Technology Drive, Bethlehem, PA 18015, USA;2. ASL Analytical Inc., 2500 Crosspark Road, Coralville, IA 52241, USA;1. US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA;2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA;3. Department of Computer Science, Engineering, and Physics, University of Michigan–Flint, Flint, MI 48502, USA;1. Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel;2. SCD-SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel;1. Physics Department and Laboratory for Microstructures, Shanghai University, 200444 Shanghai, People’s Republic of China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, People’s Republic of China;3. Department of Physics, Qufu Normal University, Qufu 273165, People’s Republic of China;1. School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF243AA, UK;2. California NanoSystem Institute, University of California, Los Angeles, CA 90095, USA
Abstract:Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that can be tailored to cover a wide range of the mid- and long-wavelength bands by varying the thickness and composition of the constituent materials, and bulk InAsSb-based XBn barrier designs. These materials can provide desirable detector features such as wider wavelength range, suppression of tunneling currents, improved quantum efficiency, and higher operating temperatures. In order to bring these advantages to market, a reliable manufacturing process must be established on large diameter substrates. We report our latest work on the molecular beam epitaxy growth of Sb-detector epiwafers on 100 mm diameter GaSb substrates in a multi-wafer production format. The growth process has been established to address the challenges of these demanding structures, including the large numbers of alternating thin layers and mixed group-V elements. Various characterization techniques demonstrate excellent surface morphology, crystalline structure quality, and optical properties of the epiwafers. The measured wafer-to-wafer consistency and cross-wafer uniformity demonstrate the potential for volume manufacturing.
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