Deep trapping states in cerium doped (Lu,Y,Gd)3(Ga,Al)5O12 single crystal scintillators |
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| Affiliation: | 1. Institute of Physics AS CR, v.v.i. Cukrovarnická 10, 162 53 Prague 6, Czech Republic;2. Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, 115 19 Prague 1, Czech Republic;3. Materials Research Laboratory, Furukawa Co. Ltd., Tsukuba 305-0856, Japan;4. Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan;1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China;2. Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China;3. State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices, And Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou, 510641, China;1. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Powstancow Wielkopolskich 2, 85-090 Bydgoszcz, Poland;2. Institute for Materials Research, Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai, Miyagi 980-8577, Japan;3. Mechantronic Department, Kazimierz Wielki University in Bydgoszcz, Kopernika 1, 85-074 Bydgoszcz, Poland;4. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okolna 2, Wrocław 50-422, Poland;5. New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;6. C&A corporation, T-Biz, 6-6-40 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;7. Facility of Science, Yamagata University, 1-4-12, Kojirakawa-machi, Yamagata 990-8560, Japan |
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| Abstract: | We study deep trapping states in Ce3+-doped garnet crystals with the composition (Lu,Y,Gd)3(Ga,Al)5O12, recently shown as having remarkably high light yield. We use thermally stimulated luminescence (TSL) technique above room temperature and determine the composition Gd3Ga3Al2O12 as the host showing the lowest concentration of traps. This host consistently manifests very low afterglow comparable to that of the standard BGO crystal. We also perform TSL glow peak analysis based on the initial rise technique to evaluate trap depth and other characteristics associated with TSL peaks. |
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