Thermal oxidation-grown vanadium dioxide thin films on FTO (Fluorine-doped tin oxide) substrates |
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| Affiliation: | 1. College of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;2. Shanghai Key Laboratory of Modern Optical System, Shanghai 200093, China;3. Department of Computer & Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China;1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia;2. Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia;3. Moscow Institute of Physics and Technology, 141700 Dolgoprudnyi, Russia;4. Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, Garching D-85748, Germany;5. Technische Universität München, Lichtenberg Str. 4, 85747 Garching, Germany;6. Institut de Ciència de Materials de Barcelona (CSIC), Campus de la U.A.B., E-08193 Bellaterra, Spain;1. School of Physics and Astronomy, Beverly and Raymond Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel;2. International Center “Smart Materials”, Southern Federal University, Zorge 5, 344090 Rostov-on-Don, Russia;3. Voronezh State University, Voronezh 394000, Russia;4. CFEL, DESY, Notkestr. 85, 22607 Hamburg, Germany;1. Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143 Baku, Azerbaijan;2. Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli, Turkey;1. School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China;2. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China |
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| Abstract: | By deposition of metallic vanadium on FTO substrate in Argon atmosphere at room temperature, the sample was then annealed in furnace for 2 h at the temperature of 410 °C in air ambient. (1 1 0) -orientated vanadium dioxide films were prepared on the FTO surface. A maximum transmittance of ∼40% happened at 900–1250 nm region at room temperature. The change of optical transmittance at this region was ∼25% between semiconducting and metallic states. In particular, vanadium dioxide thin films on FTO exhibit semiconductor–metal phase transition at ∼51 °C, the width of the hysteresis loop is ∼8 °C. |
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| Keywords: | Vanadium dioxide films FTO substrate IR transmittance |
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