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ZnO nanotubes: Controllable synthesis and tunable UV emission modulated by the wall thickness
Affiliation:1. Institute of Condensed State Physics, Jilin Normal University, Siping 136000, China;2. Institute of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, China;3. Key Laboratory of Functional Materials Physics and Chemistry (Jilin Normal University), Ministry of Education, Siping 136000, China;4. Key Laboratory of Excited State Physics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China;1. Chemistry Department, Faculty of Sciences and Letters, Marmara University, TR34722 Göztepe, Istanbul, Turkey;2. Department of Chemical Engineering, Faculty of Engineering, Marmara University, TR34722 Göztepe, Istanbul, Turkey;1. Department of Chemistry, Iran University of Science and Technology, Tehran, P. O. Box 16846-13114, Iran;2. Young Researchers and Elite Club, Arak Branch, Islamic Azad University, Arak, Iran;3. Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P. O. Box 87317-51167, Iran;1. Solid State Ionics and Energy Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu, India;2. Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario N6A 5B9, Canada;3. Central Electrochemical Research Institute – Madras Unit, Taramani, Chennai 600 113, Tamil Nadu, India;4. Faculty of Applied Chemical Engineering, Chonnam National University, Gwangju 500-757, Republic of Korea
Abstract:The ZnO nanotubes (ZNTs) with different wall thickness were fabricated by a simple wet chemical approach. Both indirect and direct transitions contribute to the UV emission of ZNTs. With the decrease of wall thickness, not only the indirect transition becomes more and more important during the emission process due to the stronger surface band bending effects and even turns into the main emission when the wall thickness decreases to 25 nm, but also the PL intensity is enhanced step by step due to the less defect density and higher carrier concentration caused by the introduction of chlorine in ZNTs during the etching process.
Keywords:Nanotubes  Wall thickness  Surface band bending  Indirect transition  PL intensity enhancement
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