Intersubband transitions in quantum well mid-infrared photodetectors |
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| Institution: | 1. Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia;2. Centre Interdisciplinaire de Nanoscience de Marseille, CINAM, UPR CNRS 3118, Aix-Marseille Université, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France;1. Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University, Qufu, 273165, China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China;1. Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya 466-8555, Japan;1. Department of Physics, Banasthali Vidyapith, Rajasthan, 304022, India;2. Higher Colleges of Technology, Abu Dhabi, UAE;3. Department of Physics, College of Science, King Faisal University, Hofuf, Al-Ahsa 31982, Saudi Arabia;4. Department of Applied Physics, Amity School of Applied Sciences, Amity University Haryana, Gurgaon, 122413, India;5. Department of Chemistry, Cumhuriyet University, Sivas, 58140, Turkey;1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, P.O. Box 912, Beijing 100083, China;2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 380 Huaibei, Huairou, Beijing 101408, China |
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| Abstract: | A study of intersubband transitions in quantum well infrared detectors working at high temperatures has been reported. This study allows a greater tunability in the device designs, with the ability to control the peak wavelength, the absorption coefficient, the dark current, the quantum efficiency and the detectivity of the modeled structure operating around 3.3 μm wavelength. The detection energy and absorption coefficient dependences with an applied electric field are given. Then, the electro-optic performances of the modeled mid-infrared detector are estimated, the dark current dependence with the applied voltage and temperature as well as the quantum efficiency and the detectivity are investigated and discussed. High detectivities were found at high temperatures revealing the good performances of the designed photodetector, especially at 3.3 μm wavelength. |
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| Keywords: | II–VI Semiconductors Quantum well Intersubband transition Absorption coefficient Infrared photodetectors |
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