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Picosecond transient photoreflectance measurements of ion-implanted GaAs |
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| Authors: | Steven C Moss John F Knudsen Robert C Bowman Jr Paul M Adams Duane D Smith |
| Institution: | a Chemistry and Physics Laboratory, USA b Electronics Research Laboratory, USA c Materials Science Laboratory, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009-2957, USA |
| Abstract: | We have used picosecond transient reflectance techniques to measure the near-surface characteristics of ion-implanted GaAs. These non-destructive laser-based diagnostic techniques allow measurement of the modification of near-surface properties at relatively low implant fluences. Photothermal phenomena dominate these results and yield important information concerning the extent of implant-induced materials modification. |
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