Effect of photoelasticity enhancement stimulated by carrier localization in a quantum well near interband resonances in superlattices |
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| Authors: | R. A. Ayukhanov G. N. Shkerdin |
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| Affiliation: | (1) Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141120, Russia |
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| Abstract: | An analytical expression is obtained for the resonant permittivity and linear photoelasticity coefficients in multiple quantum well structures near interband resonances. It is shown that the resonant photoelasticity in these structures is considerably higher than that in the bulk case and can exceed the photoelasticity near the resonance of a bulk exciton. It is noted that this result is associated with localization of noninteracting electrons and holes in the layer with a quantum well. Similar to the exciton in a bulk crystal, this system determines the elastooptic properties of the superlattice in the vicinity of the interband resonance. |
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