Effect of thermal annealing on the structure and microstructure of TiO2 thin films |
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Authors: | Haripriya Rath S. Anand M. Mohapatra Priyadarshini Dash T. Som U. P. Singh N. C. Mishra |
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Affiliation: | (1) Department of Physics, Utkal University, Bhubaneswar, 751 004, Orissa, India;(2) Institute of Minerals and Materials Technology, Bhubaneswar, 751 013, Orissa, India;(3) Institute of Physics, Bhubaneswar, 751 005, Orissa, India;(4) KIIT University, Bhubaneswar, 751 024, Orissa, India |
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Abstract: | Nanostructured TiO2 thin films have been prepared through chemical route using sol-gel and spin coating techniques. The deposited films were annealed in the temperature range 400–1000°C for 1 h. The structure and microstructure of the annealed films were characterized by GAXRD, micro-Raman spectroscopy and AFM. The as-deposited TiO2 thin films are found to be amorphous. Micro-Raman and GAXRD results confirm the presence of the anatase phase and absence of the rutile phase for films annealed up to 700°C. The diffraction pattern of the film annealed at 800 to 1000°C contains peaks of both anatase and rutile reflections. The intensity of all peaks in micro-Raman and GAXRD patterns increased and their width (FWHM) decreased with increasing annealing temperature, demonstrating the improvement in the crystallinity of the annealed films. Phase transformation at higher annealing temperature involves a competition among three events such as: grain growth of anatase phase, conversion of anatase to rutile and grain growth of rutile phase. AFM image of the asdeposited films and annealed films indicated exponential grain growth at higher temperature. |
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Keywords: | TiO2 thin film nucleation and growth spin coating |
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