缓蚀剂对铜作用的激光扫描微区光电化学研究

采用激光扫描微区光电化学显微技术(PEM)对不同浓度下的苯并三氮唑(BTA)及其衍生物4-羧基苯并三唑甲酯与5-羧基苯并三唑甲酯的混合物(CBTME)在硼砂缓冲溶液(pH9.2)中对铜电极的缓蚀作用作了比较研究。研究发现当电位正向扫描至某一电位时，一定浓度的BTA或CBTME作用下，铜电极光响应由p-型转化为n-型，并可依此判断缓蚀剂的缓蚀性能，n-型光响应越大，缓蚀剂的缓蚀性能越好，与循环伏安光电流及交流阻抗测试的结果相一致；实验还发现，影响缓蚀剂对铜作用的过程不仅与缓蚀剂本身有关，还与电极电位有关。在一定的电位与一定的缓蚀剂浓度下可观察到铜电极表面共存着p-型和n-型区域及p转n的过程，因此可从微观上观察到缓蚀剂与铜表面作用的过程，为缓蚀剂的应用建立了良好的理论基础。

Study on copper surface in buffer-borax solutions with BTA and its derivatives CBTME by PEM

In - situ photoelectrochemical microscopic method (PEM) has been used to characterize the spatial variation of the film formed on the copper surface in buffer - borax solutions (pH 9.2) with different concentration of benzotriazole (BTA) and combined benzotriazole methanoic acid ester (CBTME) . It is shown from PEM that the transition of photocurrent on copper electrode from p - type to n - type at the action of the certain amount of the inhibitors. The more concentrated the inhibitors, the more the n - type photoresponse and the more effective the inhibition. The inhibition action is not only related to the properties of inhibitors but also to the applied potential. At a certain potential the coexistance of the p - type and n - type zones at the different position on the copper electrode and the process of the transition of the photocurrent from p - type to n - type can be observed.