Probing lattice defects in Sr2MgSi2O7:Eu2+,Dy3+ |
| |
| Authors: | Hirotoshi Furusho Jorma Hölsä Taneli Laamanen Mika Lastusaari Janne Niittykoski Yasuo Okajima Aishi Yamamoto |
| |
| Affiliation: | 1. Nara Institute of Science and Technology, Graduate School of Materials Science, Takayama, Ikoma, Nara JP-630-0192, Japan;2. Osaka University, Research Center for Ultra-High Voltage Electron Microscopy, Mihogaoka, Ibaraki, Osaka JP-567-0047, Japan;3. University of Turku, Department of Chemistry, FI-20014 Turku, Finland;4. Graduate School of Materials Research, Turku, Finland;1. Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid, Spain;2. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, 28049 Madrid, Spain;3. Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid, Spain |
| |
| Abstract: | The Sr2MgSi2O7:Eu2+,Dy3+ materials were prepared with a solid state reaction and their microscopic structure (at 295 K only) and luminescence were studied at selected temperatures between 150 and 295 K. Undisturbed Sr crystal planes were common in the TEM images of the undoped Sr2MgSi2O7 material, whereas with Eu2+ doping more disturbed planes were observed even in the nanometer scale. With Dy3+ co-doping, a large number of small lattice domains created by the discontinuities in the crystal structure was observed. The domains with different orientations seem to be centered around point defects. The decay curves of Sr2MgSi2O7:Eu2+,Dy3+ showed fast (ms scale) persistent luminescence. The intensity of persistent luminescence increased considerably between 200 and 250 K while remaining constant in the ranges of 150–200 and 250–295 K. The changes were used to study the depth of the traps. In general, Dy3+ co-doping was found to deepen the traps. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
