Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature |
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| Authors: | Shinsuke Miyajima Makoto Sawamura Akira Yamada Makoto Konagai |
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| Affiliation: | 1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;2. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
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| Abstract: | n-Type hydrogenated nanocrystalline cubic silicon carbide (nc-3C–SiC:H) films have been deposited by very high-frequency plasma-enhanced chemical vapor deposition at a low substrate temperature of about 360 °C to apply this material to the window layer of heterojunction crystalline silicon (HJ-c-Si) solar cells. We investigated the effect of in situ doping on deposition rate, crystalline volume fraction and dark conductivity to optimize properties of the material. We also fabricated HJ-c-Si solar cells with a n-type nc-3C–SiC:H window layer. The solar cells shows high internal quantum efficiency of 0.90 at a wavelength of 400 nm, indicating that n-type nc-3C–SiC:H deposited by VHF-PECVD is a promising candidate of the window layer of HJ-c-Si solar cells. |
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