Preparation and characterization of telluride glasses

Chalcogenide bulk glasses Ge₂₀Se_80?xTe_x for x ∈ (0, 10) have been prepared by systematic replacement of Se by Te. Selected glasses have been doped with Er and Pr, and all systems have been characterized by transmission spectroscopy, measurements of dc electrical conductivity and low-temperature photoluminescence. Absorption coefficient has been derived from measured transmittance and estimated reflectance. Both absorption and low-temperature photoluminescence spectra reveal shifts of absorption edge and/or dominant luminescence band to longer wavelength due to Te → Se substitution. Arrhenius plots of dc electrical conductivity, in the temperature range 300–450 K, are characterized by activation energies roughly equal to the half of the optical gap. Arrhenius plots for temperatures below 300 K yield much lower activation energies. The dominant low-temperature luminescence band centered at about half the band gap energy starts to quench above 200 K and a new band appears at 900 nm. The band at 900 nm, due to band to band transitions, overwhelms the spectra at room temperature. Systems doped with Er exhibit a strong luminescence due to ⁴I_13/2 → I_15/2 transition of Er³⁺ ion at 1539 nm, and Pr doped samples exhibit a relatively weak luminescence peak at 1590 nm, which we tentatively assign to ³F₃ → ³H₄ transition of Pr³⁺ ion.