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A study of absorption coefficient spectra in a-Si:H films near the transition from amorphous to crystalline phase measured by resonant photothermal bending spectroscopy |
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| Authors: | Norimitsu Yoshida Yasuko Shimizu Takashi Honda Toshiaki Yokoi Shuichi Nonomura |
| Affiliation: | 1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | Optical absorption spectra of a widegap hydrogenated amorphous silicon film have been estimated by resonant photothermal bending spectroscopy. It is found that excess absorption exists over the photon energy region of 1.2–1.6 eV. This excess absorption decreases by light illumination and does not recover through thermal annealing. The decrease in the excess absorption may be due to oxidization of the film by light illumination. |
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