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Influence of plasma power and substrate temperature on structure of nanocrystalline germanium carbon thin films by VHF plasma CVD |
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| Authors: | Yasutoshi Yashiki Seiichi Kouketsu Shinsuke Miyajima Akira Yamada Makoto Konagai |
| Institution: | 1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;2. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | The influence of plasma power and substrate temperature on the structure of nanocrystalline germanium carbon thin films was investigated. Films were deposited by the very high frequency plasma chemical vapor deposition technique using hydrogen diluted monomethylgermane (MMG). Plasma power strongly affected the decomposition of hydrogen and MMG. Crystalline volume fraction and bonding states of the atoms in the films depends on plasma power and substrate temperature. FT-IR measurements also revealed that Ge–Hn and CHn bonds are sensitive to these factors. |
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