Growth and characterization of GaSb/AlGaSb multi-quantum well structures on Si (0 0 1) substrates |
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| Authors: | Hideyuki Toyota Tomonori Sasaki Yoshio Jinbo Naotaka Uchitomi |
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| Affiliation: | Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188, Niigata, Japan |
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| Abstract: | GaSb/AlGaSb multi-quantum well (MQW) structures with an AlSb initiation layer and a relatively thick GaSb buffer layer grown on Si (0 0 1) substrates were prepared by molecular beam epitaxy (MBE). Transmission electron microscopy (TEM) images and high-resolution X-ray diffraction (XRD) patterns indicated definite MQW structures. The photoluminescence (PL) emission around 1.55 μm wavelength was observed for 10.34 nm GaSb/30 nm Al0.6Ga0.4Sb MQW structure at room temperature. Dependence of PL emission energy on GaSb well width was well explained by finite square well potential model. |
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