The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices |
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| Authors: | R Prabakaran M Peres T Monteiro E Fortunato R Martins I Ferreira |
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| Institution: | 1. Departamento de Ciência dos Materiais, CENIMAT, Centro de Investigação de Materiais I3N, Instituto de Nanoestruturas, Nanomodelação e Nanofabricação, FCT-UNL, Caparica 2829-516, Portugal;2. Departamento de Física/I3N, Universidade de Aveiro, 3810-193 Aveiro, Portugal;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
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| Abstract: | In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of ZnO films coating on PS. A systematic investigation from Raman spectroscopy suggests the formation of a good quality ZnO wurtzite structure on PS. The photoluminescence (PL) measurements on PS and ZnO coated PS shows a red, blue and UV emission bands at around ～1.8, ～2.78 and ～3.2 eV. An enhancement of all PL emission bands have been achieved after ZnO films deposition on high porosity PS. |
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