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Influence of crystalline volume fraction on the performance of high mobility microcrystalline silicon thin-film transistors |
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| Authors: | Kah-Yoong Chan Dietmar Knipp Aad Gordijn Helmut Stiebig |
| Institution: | 1. Jacobs University Bremen, School of Engineering and Science, 28759 Bremen, Germany;2. Research Center Jülich, IEF5-Photovoltaics 52425 Jülich, Germany;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | The influence of the crystalline volume fraction of hydrogenated microcrystalline silicon on the device performance of thin-film transistors fabricated at temperatures below 200 °C was investigated. Transistors employing microcrystalline silicon channel material prepared close to the transition to amorphous growth regime exhibit the highest charge carrier mobilities exceeding 50 cm2/V s. The device parameters like the charge carrier mobility, the threshold voltage and the subthreshold slope will be discussed with respect to the crystalline volume fraction of the intrinsic microcrystalline silicon material. |
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