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Rapid crystallization of amorphous silicon utilizing a radio-frequency thermal plasma torch |
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| Authors: | Koji Haruta Mina Ye Yu-ichiro Takemura Tomohiro Kobayashi Tatsuo Ishikawa Jhantu Kumar Saha Hajime Shirai |
| Affiliation: | 1. The Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan;2. The Japan Science and Technology Agency (JST), 2-1-6 Sen-gendai, Tsukuba, Ibaraki 305-0047, Japan;3. The Institute of Physics and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama, Japan;4. Horiba Co. Ltd., Higashi-Kanda, Chiyoda, Tokyo 101-0031, Japan;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | The rapid crystallization of amorphous silicon utilizing the radio-frequency (rf) inductive coupling thermal plasma torch of argon is demonstrated. Highly-crystallized Si films were fabricated on thermally grown (th-)SiO2 and textured a-Si:H:B/SnO2/glass by adjusting a distance between the tip of the silica tube and the substrate stage and the translational velocity of the substrate stage. The crystallization was promoted efficiently from the bottom to front surface during the solidification and crystallization of liquid Si. |
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