Preparation of indium tin oxide thin films without external heating for application in solar cells

Indium tin oxide (ITO) films were grown without external heating in an ambient of pure argon by RF-magnetron sputtering method. The influence of argon ambient pressure on the electro-optical properties of as-deposited ITO films was investigated. The morphology, structural and optical properties of ITO films were examined and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and UV–VIS transmission spectroscopy. The deposited ITO films with a thickness of 300 nm show a high transparency between 80% and 90% in the visible spectrum and 14–120 Ω/□ sheet resistance under different conditions. The ITO films deposited in the optimum argon ambient pressure were used as transparent electrical contacts for thin film Cu(In,Ga)Se₂ (CIGS) solar cells. CIGS solar cells with efficiencies of the order of 7.0% were produced without antireflective films. The results have demonstrated that the developed ITO deposition technology has potential applications in thin film solar cells.