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Vacuum-deposited poly(o-methoxyaniline) thin films: Structure and electronic properties |
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| Authors: | V Cherpak P Stakhira Z Hotra O Aksimentyeva B Tsizh D Volynyuk I Bordun |
| Institution: | 1. Lviv Polytechnic National University, S. Bandera 12, 79013 Lviv, Ukraine;2. Ivan Franko Lviv National University, Kyryla and Mefodia 8, 79005 Lviv, Ukraine;3. Rzeszów University of Technology, W.Pola 2, 35-959 Rzeszów, Poland;4. Kazimierz Wielki University, Chodkiewicza 30, 85-064 Bydgoszcz, Poland;1. Gdansk University of Technology, Gdansk, Poland;2. Institute of Molecular Physics, Polish Academy of Sciences, Poznan, Poland;3. University of Athens, Athens,Greece |
| Abstract: | Thin poly(o-methoxyaniline) (POMA) films have been formed by thermovacuum deposition in the temperature range of 350–450 °C and at a pressure of 5 × 10?5 Torr. The structure properties of vacuum deposited POMA films according to FTIR and UV–VIS spectra are similar to those observed for the emeraldine form of polyaniline. Current–voltage characteristics (I–V) of sandwichtype device ITO/POMA/A1 possess rectifying properties with the ideality factor ≈4 at room temperature. On the basis of the dependence of conductivity on frequency in the frequency range of 10 Hz to 1 MHz, it is shown that the Pollack–Pohl current flow hopping mechanism dominates in a polymer film; such mechanism is typical of non-ordered systems. |
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