Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies |
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| Authors: | R. Amrani D. Benlekehal R. Baghdad D. Senouci A. Zeinert K. Zellama L. Chahed J.D. Sib Y. Bouizem |
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| Affiliation: | 1. Laboratoire de Physique des Couches Minces et Matériaux pour l’Électronique, Département de Physique, Université d’Oran ES-Sénia, 3100 Oran, Algeria;2. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences, 33 rue Saint-Leu, 80039 Amiens, France;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
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| Abstract: | In order to contribute to the understanding of the optoelectronics properties of hydrogenated nanocrystalline silicon films, a detailed study has been conducted. Structural analysis (infrared absorption and Raman scattering spectroscopy), combined with optical measurements spectroscopy (optical transmission, photothermal deflection spectroscopy and photoconductivity) were used to characterize the films. The samples were elaborated by radio-frequency magnetron sputtering of crystalline silicon target, under a hydrogen (70%) and Argon (30%) gas mixture, at three different total pressures (2, 3 and 4 Pa) and varying substrate temperature (100, 150 and 200 °C). The results clearly indicate that the films deposited at 2 Pa are amorphous, while for 3 and 4 Pa nanocrystalline structures are observed. These results are discussed in the framework of the existing models. |
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