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Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry |
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| Authors: | L Pereira H Águas M Beckers RMS Martins E Fortunato R Martins |
| Institution: | 1. Materials Science Department, CENIMAT/I3N and CEMOP/UNINOVA, FCT–UNL, Campus de Caparica, 2829-516 Caparica, Portugal;2. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden, Germany;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | In this paper a new approach is presented for the simulation of spectroscopic ellipsometry (SE) data to estimate the level of nickel (Ni) contamination in silicon crystallized by metal induced crystallization (MIC). The method employs the addition of Ni as reference for a Bruggemann effective medium approximation (BEMA) to simulate the optical response of the crystallized silicon. This new approach is sensitive to changes in the initial average metal thickness used on the crystallization process to thickness values as low as 0.05 nm. This corresponds to a volume fraction of 0.24%, confirmed by Rutherford backscattering spectrometry (RBS) where it was observed that the Ni volume fraction detected by SE varies linearly with the metal amount inside the crystallized films determined by RBS. |
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