Transport properties near the magneto/structural transition of Tb5Si2Ge2 |
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| Authors: | A.M. Pereira C. Magen M.E. Braga R.P. Pinto R. Fermento P.A. Algarabel L. Morellon M.R. Ibarra J.P. Araújo J.B. Sousa |
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| Affiliation: | 1. IFIMUP-IN, Rua do Campo Alegre, 678, 4169-007 Porto, Portugal;2. Instituto de Ciencia de Materiales de Aragón Univ. de Zaragoza and CSIC, 50009 Zaragoza, Spain;3. Instituto de Nanociencia de Aragón, 50009 Zaragoza, Spain |
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| Abstract: | We report high resolution measurements of the electrical resistivity (ρ, dρ/dT) and thermopower (S, dS/dT) measurements near the magnetic and structural transition of the layered Tb5Si2Ge2 compound, which are fairly close but not fully coupled. The analysis of the transport properties confirms a split magneto/structural transition, with TS ～ 97 K and TS ～ 107 K for the structural transition (on cooling and heating respectively; 1st-order transition). The magnetic transition occurs only at TC ～ 112 K and without hysteresis (2nd-order transition). The magnetic critical behavior of resistivity is analyzed, obtaining an almost classical mean field exponent (α ～ 0.59) for T > TC. For the structural phase, and below TS, we obtain a rather different exponent (α ～ 1.06). |
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