Influence of oxygen partial pressure on the properties of undoped InOx films deposited at room temperature by rf-PERTE |
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Authors: | C Nunes de Carvalho G Lavareda P Parreira J Valente A Amaral AM Botelho do Rego |
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Institution: | 1. Department de Ciência dos Materiais, FCT-UNL, Campus da Caparica, 2829-516 Caparica, Portugal;2. ICEMS, IST, UTL, Av. Rovisco Pais, 1049-001 Lisboa, Portugal;3. CQFM, IST, UTL, Rovisco Pais, 1049-001 Lisboa, Portugal |
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Abstract: | Transparent and conductive/semiconductive undoped indium oxide (InOx) thin films were deposited at room temperature. The deposition technique used is the radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium (In) in the presence of oxygen. The influence of oxygen partial pressure on the properties of these films is presented. The oxygen partial pressure varied between 3 × 10?2 and 1.3 × 10?1 Pa. Undoped InOx films, 100 nm thick, deposited at the oxygen partial pressure of 6 × 10?2 Pa show a conductive behaviour, exhibit an average visible transmittance of 81%, a band gap around 2.7 eV and an electrical conductivity of about 1100 (Ω cm)?1. For oxygen pressures greater than 6 × 10?2 Pa, semiconductive films are obtained, maintaining the visible transmittance. Films deposited at lower pressures are conductive but dark. From XPS data, films deposited at an oxygen partial pressure of 6 × 10?2 Pa show the highest amount of oxygen in the film surface and the lowest ratio between oxygen in the oxide crystalline and amorphous phases. |
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