UV emission properties of highly Pr3+-doped YAG epitaxial waveguides |
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| Authors: | R Piramidowicz K Ławniczuk M Nakielska J Sarnecki M Malinowski |
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| Institution: | 1. Institute of Microelectronics and Optoelectronics PW, ul. Koszykowa 75, 00-662 Warsaw, Poland;2. Telekomunikacja Polska R&D Center, Obrze?na 7, 02-691 Warsaw, Poland;3. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;1. Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid, Spain;2. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, 28049 Madrid, Spain;3. Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid, Spain |
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| Abstract: | In this work we present and discuss the dependence of ultraviolet (UV) photoluminescence of praseodymium ion (Pr3+):YAG crystalline waveguides, produced by liquid phase epitaxy, on activator concentration. Praseodymium level influence on UV fluorescence intensity, transition linewidth and dynamics was carefully investigated in order to better understand the nature of processes shaping both the interconfigurational d–f emission and intraconfigurational f–f emissions starting from the 3P0 excited state. The pathways and the role of interconfiguration cross-relaxation in quenching of the UV 4f5d emission are analyzed. |
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