|
|||||
|
|
A simple quality factor for characterization of thin silicon films |
|
| Authors: | J Ko?ka T Mates M Ledinský H Stuchlíková J Stuchlík A Fejfar |
| Institution: | 1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | Four series of intrinsic thin Si films were prepared by plasma enhanced chemical vapor deposition at standard and high growth rate conditions. We suggest a simple ‘μc-Si:H layer quality factor’ based on the ratio of subgap optical absorption coefficient values: α(1.4 eV)/α(1 eV). This ratio minimizes the light scattering effects for rough films and can serve as a reliable detection of the amorphous/microcrystalline structure transition and also as a figure of merit for the microcrystalline layer. The quality factor is evaluated for series of our samples with well known structure and also compared with samples from other laboratories with different deposition and measurement techniques. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |