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Correlation between micro-roughness,surface chemistry,and performance of crystalline Si/amorphous Si:H:Cl hetero-junction solar cells
Authors:H. Matsui  T. Saito  J.K. Saha  H. Shirai
Affiliation:1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA
Abstract:The correlation between micro-roughness, surface chemistry, and performance of crystalline Si/amorphous Si:H:Cl hetero-junction solar cells is discussed through a deposition study of amorphous Si:H:Cl (a-Si:H:Cl) films by rf plasma-enhanced chemical vapor deposition using a SiH2Cl2–H2 mixture. The degree of H- and Cl-termination on the growing surface determined the degree of micro-roughness at the p-type a-Si:H:Cl/intrinsic a-Si:H:Cl interface and solar cell performance. A higher degree of Cl-termination compared to H-termination was effective to suppress the micro-roughness at the growing surface and oxygen incorporation into the film, as well as chemical reduction of the intrinsic a-Si:H:Cl layer during the underneath p-layer formation. The study showed that a-Si:H:Cl deposited from SiH2Cl2 is a potential material for c-Si hetero-junction solar cells with an intrinsic a-Si:H:Cl thin layer.
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