Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

By using the hydride vapor phase epitaxy and a void-assisted separation method, freestanding 3-in GaN substrates were successfully fabricated for the first time, and the process showed an excellent reproducibility. A thick GaN layer 3.2 in in diameter was easily separated from the base substrate. No cracks were generated during the separation process. The dislocation density was of the order of 10⁶ cm^–2. The carrier density was approximately 1×10¹⁸ cm^–3 and the mobility was 3.4×10² cm² V^–1 s^–1. The concentrations of impurities, estimated by secondary-ion mass spectrometry, were below the limit of detection, except for Si. The Si concentration was approximately 1×10¹⁸ cm^–3, which is in good agreement with the carrier density.