Low-temperature transport and ferromagnetism in GaAs-based structures with Mn |
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Authors: | V A Kulbachinskiĭ P V Gurin Yu A Danilov E I Malysheva Y Horikoshi K Onomitsu |
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Institution: | (1) Moscow State University, Vorob’evy gory, Moscow, 119992, Russia;(2) Research Institute of Physics and Engineering, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia;(3) School of Science and Engineering, Waseda University, Tokyo 169-8555, Japan |
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Abstract: | GaAs structures with implanted Mn and, additionally, with Mg for increasing the hole concentration in the implanted Mn layer are synthesized and investigated. SQUID magnetometer measurements revealed the existence of ferromagnetism in the temperature range 4.2 K ≤ T < 400 K, which is associated with the formation of the Ga1?x Mn x As solid solution and MnAs and Ga1?y Mn y clusters in the sample as a result of rapid high-temperature annealing. At temperatures from 4.2 to approximately 200 K, the anomalous Hall effect associated with additional magnetization of the sample is observed. As the temperature increases from 4.2 K, the colossal negative magnetoresistance is transformed into a positive magnetoresistance at T ≈ 35 K. |
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