Cl-离子修饰Ce3+掺杂SiO2材料发光峰的蓝移

采用溶胶凝胶技术通过添加Ce(NO3)3制备了掺杂Ce3 离子的纳米SiO2材料,进行了不同温度的氯化处理。采用电子能谱、吸收光谱以及荧光光谱对Cl-离子修饰Ce3 掺杂SiO2材料的成分及光学性能进行分析、测试,研究Cl-离子修饰对掺杂SiO2材料中Ce3 离子光学性能的影响。测试结果表明,经过氯化处理不仅可以明显提高Ce3 离子掺杂SiO2材料的发光强度,还可以使发光和激发波长产生明显的变化,发光波长由445 nm蓝移至390 nm,激发波长由326 nm蓝移至290 nm左右。这种转化具有可逆性,将经氯化处理的样品重新在空气中处理后,发光强度减弱,发光和激发波长也恢复到氯化处理前的位置。

Blue Shift of Luminescence of Cl- Ions-Decorated Ce3+-Doped Silica

A Ce~(3 )-doped nanoscale SiO_2 material was prepared by sol-gel method through adding Ce(NO_3)_3 and the samples were decorated by Cl~-at different temperatures to study the effect of Cl~-decoration on the luminescent properties of Ce~(3 ) in SiO_2.The components and luminescent properties of Ce~(3 ) doped SiO_2 after treatment were studied by X-ray photoelectron spectra,absorption pattern and fluorescence spectra.The measurement of luminescence showed that the Cl~-decoration not only enhanced the intensity of the luminescence of Ce~(3 ) doped SiO_2 but also shifted the luminescent band to the short wavelength: the wavelength of emission shifted from 445 nm to(390 nm) and the excitation from 326 nm to about 290 nm,and this shift was reversible.When the samples were retreated in the air after Cl~-decoration,the intensity and wavelength of the photoluminescence resumed to the original value before Cl~-decoration.